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UNISONIC TECHNOLOGIES CO., LTD 3N80
Preliminary Power MOSFET
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON)=3.8 @VGS=10 V * Ultra low gate charge ( typical 19 nC ) * Low reverse transfer capacitance ( CRSS = typical 11 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
Lead-free: 3N80L Halogen-free: 3N80G
SYMBOL
2.Drain
3.Gate
1.Source
ORDERING INFORMATION
Normal 3N80-TA3-T 3N80-TF3-T Ordering Number Lead Free 3N80L-TA3-T 3N80L-TF3-T Halogen Free 3N80G-TA3-T 3N80G-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
www.unisonic.com.tw Copyright (c) 2008 Unisonic Technologies Co., Ltd
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3N80
Preliminary
SYMBOL VDSS VDGR VGSS BVGSO VESD(G-S) VISO IAR ID IDM EAS dv/dt
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25, unless otherwise specified)
RATINGS UNIT 800 V 800 V 30 V 30(MIN) V 2 V TO-220F 2500 V 2.5 A 2.5 A 10 A 170 mJ 4.5 V/ns TO-220 70 Power Dissipation PD W TO-220F 25 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. starting TJ=25 C, ID=IAR, VDD=50V 4. ISD2.5A, di/dt200A/s, VDDBVDSS, TJTJ(MAX). PARAMETER Drain-Source Voltage (VGS=0V) Drain-Gate Voltage (RG=20k) Gate-Source Voltage Gate-Source Breakdown Voltage (IGS=1mA) Gate Source ESD(HBM-C=100pF, R=1.5K) Insulation Withstand Voltage (DC) Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 3) Peak Diode Recovery dv/dt (Note 4)
THERMAL DATA
PARAMETER Junction-to-Ambient Junction-to-Case TO-220 TO-220F TO-220 TO-220F SYMBOL JA JC RATING 62.5 62.5 1.78 5 UNIT C/W C/W
ELECTRICAL CHARACTERISTICS (TC=25, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (Note 1) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance (Note 2) SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) gFS CISS COSS CRSS COSS(EQ) tD(ON) tR tD(OFF) tF QG QGS QDD TEST CONDITIONS VGS=0V, ID=1mA VDS=800V, VGS=0 V VGS=30V, VDS=0 V VDS=VGS, ID=50A VGS=10V, ID=1.25A VDS=15V, ID=1.25A MIN TYP MAX UNIT 800 1 10 3 3.75 3.8 2.1 485 57 11 22 17 27 36 40 19 3.2 10.8 4.5 4.5 V A A V S pF pF pF pF ns ns ns ns nC nC nC
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VDS=25V, VGS=0V, f=1MHz VGS=0V, VDS=0V~640V
VDD=400V, ID=1.25 A, RG=4.7 VGS=10 V
VDD=640V, ID=2.5A, VGS=10V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=2.5A ,VGS=0V 1.6 V Source-Drain Current ISD 2.5 A Source-Drain Current (Pulsed) ISDM 10 A Reverse Recovery Current IRRM 8.4 A ISD=2.5A, di/dt=100A/s, Body Diode Reverse Recovery Time tRR 384 ns VDD=50V, TJ=25C 1600 nC Body Diode Reverse Recovery Charge QRR Note: 1.Pulse width=300s, Duty cycle1.5% Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD
ID(t)
VDS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3N80
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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